HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS

摘要

A charge storage device (50, 91), such as an integrated circuit memory (91),including a dielectric (56, 89) comprising a barium-strontium-niobium oxide. Aliquid precursor including the metals barium, strontium, and niobium isprepared and applied to a platinum electrode (55, 88). The precursor is bakedand annealed to form a dielectric (56, 89) having the formula BaxSryNbzO30,where x = 1.3 to 3.5, y = 1.5 to 3.7, and z = 10. A top platinum electrode(63, 90) is then formed to provide a memory cell capacitor (50, 84). Optimumresults to date have been obtained with Ba2Sr3Nb10O30, which yields a memorycell dielectric with dielectric constant over 1000 and a leakage current ofless than 10-5 amperes per square centimeter for voltages up to 5 volts.