OXIDES AND NITRIDES OF METASTABILE GROUP IV ALLOYS AND NITRIDES OF GROUP IV ELEMENTS AND SEMICONDUCTOR DEVICES FORMED THEREOF

摘要

this invention relates to a process and devices produced using this method.with this method, we form of mosfet devices, cmos, bicmos, using alloys of group iv and, more particularly, for sixge1 - x for 0 x 1, using a technique of ion beam oxidation or nitriding (fio) by ion beam deposition (nfi) by ion beam (dfim) to form composite insulators consisting of group iv alloys.