OXIDES AND NITRIDES OF METASTABILE GROUPE IV ALLOYS AND NITRIDES OF GROUP IV ELEMENTS AND SEMICONDUCTOR DEVICES FORMED THEREOF

摘要

This invention relates to a method and devices produced using this method. With this method, form of MOSFET devices, CMOS, BICMOS using alloys of group IV, in particular of SixGe1-x wherein 0 x 1, using an oxidation technique ion beam (OFI) or nitriding ion beam (BSS) by mixed ion beam deposition (DFIM) to form compounds insulators Group IV alloys.