Fabrication method of high purity dielectric thin film and complex for high purity dielectric thin film

摘要

High-purity MTiO with improved electrical characteristics, especially leak current and breakdown voltage, by MOCVD₃(M = Sr and / or Ba) type dielectric thin film.;(-diketonato) Sr or Ba complex having a content of each of an alkali metal and an alkaline earth metal, which are impurity metals, of 1 ppm or less is used as a source of the metal of the M metal, or both. This high-purity volatile complex is obtained by pyrolysis of Sr or Ba nitrate (or acetate salt) having a residual amount of 1 ppm or less of each of an alkali metal and an alkaline earth metal, which are impurity metals and purified by using a recrystallization method and an ion exchange chromatography method together. SrO or BaO, and then reducing this with a metal by the thermite method to produce Sr or Ba of high purity and reacting it with -diketone.