Fabrication method of high purity dielectric thin film and complex for high purity dielectric thin film

摘要

A high purity MTiO ₃ (M = Sr and / or Ba) type dielectric thin film with improved electrical properties, in particular leakage current and dielectric breakdown voltage, is fabricated by MOCVD.;As a source of the M metal, a high-purity bis (β-diketonato) Sr or Ba complex or both having an alkali metal and alkaline earth metal content of 1 ppm or less is used. This highly pure volatile complex is highly purified by pyrolysis of Sr or Ba nitrate (or acetate) having a content of 1 ppm or less of alkali metals and alkaline earth metals, each of which is purified by using recrystallization and ion exchange chromatography. SrO or BaO is prepared, and is produced by reacting high purity Sr or Ba obtained by reducing it to metal by the Termit method with β-diketone.