Fabrication and dielectric properties of SCT thin film by RF sputtering method

摘要

The (Sr/sub 0.9/Ca/sub 0.1/)TiO/sub 3/(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO/sub 2//Si) using RF magnetron sputtering method. The composition of SCT thin film were closed to stoichiometry (1.081 in A/B ratio). The optimum annealing temperature of SCT thin film was 600[/spl deg/C]. The dielectric constant depending on the annealing temperature was shown to be the great 146 at 600[/spl deg/C]. The temperature coefficients of capacitance exhibit very stable values below /spl plusmn/4[%] in the temperature range of -80 /spl sim/ 90[/spl deg/C]. The temperature properties of the dielectric loss have a stable value within 0.02. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].