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SPUTTERING TARGET FOR THIN FILM FORMATION, DIELECTRIC THIN FILM, OPTICAL DISK, AND METHOD FOR PRODUCING THE DIELECTRIC THIN FILM
SPUTTERING TARGET FOR THIN FILM FORMATION, DIELECTRIC THIN FILM, OPTICAL DISK, AND METHOD FOR PRODUCING THE DIELECTRIC THIN FILM
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机译:薄膜形成的溅射靶,介电薄膜,光碟和制造介电薄膜的方法
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摘要
PROBLEM TO BE SOLVED: To prevent the diffusion of water and oxygen from a dielectric protective film by eliminating free oxygen from a thin oxide film without detriment to the characteristics of the film as a dielectric protective film.;SOLUTION: A thin film of a mixed oxide comprising niobium oxide and silicon oxide or comprising niobium oxide and titanium oxide is used as a dielectric material for forming a dielectric protective film for an optical disk etc. In a desirable example, a target comprising niobium oxide as a main component and 1 to 30 wt.% of silicon oxide is used in the formation of an oxide thin film by sputtering. In this case, the oxide thin film is formed desirably in a nitrogen atmosphere. A nitrogen-containing oxide thin film is made by sputtering an oxygen-deficient target in the presence of a small amount of added nitrogen. By this way, it is possible to make a thin film having low reducibility and consequent high barrier properties as well as properties equivalent to those of a perfect oxide.;COPYRIGHT: (C)2006,JPO&NCIPI
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