High purity dielectric thin film

摘要

PURPOSE: To obtain a dielectric thin film having a little leak current by using a perovskite titanate compd. containing specified metal elements and specifying the content of alkali metal impurities. ;CONSTITUTION: This dielectric thin film has a compsn. expressed by general formula MTiO₃ (wherein M is one or more elements selected from Ba, Ca, Mg, Sr, Nb, Bi, Cd, Ce, and La) or general formula (M_x Pb_1-x) TiO₃ (wherein M is one or more elements selected from Ba, Ca, Mg, Sr, Nb, Bi, Cd, and Ce and 0x1). The content of alkali metal impurities in the compsn. is specified to ≤1ppm. A highly purified perovskite titanate compd. is used for this compsn. and dissolved in an org. solvent to prepare a coating liquid. The coating liquid is applied on a substrate, dried and calcined to form the dielectric thin film.;COPYRIGHT: (C)1993,JPO&Japio