Manufacturing method of high purity dielectric thin film

摘要

PROBLEM TO BE SOLVED: To obtain a dielectric thin film improved in its electric characteristics through the MOCVD technique by using high-purity Sr and/or Ba complexes as a source of M metal in the production of a dielectric thin film of the crystalline structure of the formula: MTiO₃. ;SOLUTION: This invention provides a process for producing a dielectric thin film of the perovskite crystalline structure of the general formula: MTiO₃ (M=Ba and/or Sr) through the organo-metal chemical vapor deposition(MOCVD) technique using Sr or Ba β-diketone complex or both of formulas I and II (M=Sr or Ba) whose content of other impure metals is 1ppm as a metal source. This complex is produced by allowing high purity metallic Sr or Ba to react with a β-diketone in a non-aqueous organic solvent or by mixing high- purity SrO or BaO with aluminum and reducing the oxide with heat under reduced pressure.;COPYRIGHT: (C)1997,JPO