Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer

摘要

An electromagnetic radiation transducer is provided having a p- type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (N.sub.D /N.sub.A) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5× 10.sup.15 cm .sup.-3 and the resistivity is less than 15 &OHgr;-cm. The p- type ZnSe layer is deposited by doping the ZnSe during fabrication with a neutral free-radical source.