ETCHING OF GAN SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for etching an electrically conductive GaN semiconductor layer formed on a substrate in accordance with the design basis. ;SOLUTION: In this method, when an electrically conductive GaN semiconductor layer 6 formed on a substrate 1 via a buffer layer 5 is etched, a metallic layer 3 is formed in a place, where etching is to be carried out on the substrate 1, and the buffer 5 and the electrically conductive GaN semiconductor layer 6 are formed in this order on the surface of the substrate including this metallic layer 3, and a protecting film 7 is formed in a region 6B, where no etching is to be carried out. Then, electrolytic erosion treatment is carried out by using the electrically conductive GaN semiconductor layer 6, connected to a metal plate 9 as an anode within an alkaline electrolyte solution.;COPYRIGHT: (C)1998,JPO