PROBLEM TO BE SOLVED: To provide an optical device, including a substrate having a thermal matching boundary and a waveguide structure. ;SOLUTION: This optical device is so formed as to include the doped silica substrate 20 having a coefft. of thermal expansion of 8×10-7 to 15×10-7°C-1. The doped silica waveguide structure 30 having the coefft. of thermal expansion of 8×10-7 to 15×10-7°C-1 is formed on the substrate. A clad layer 40 is formed on the doped silica wavelength structure. The coefft. of thermal expansion of the doped silica substrate is selected at about 90 to 110% of the coefft. of thermal expansion of the doped silica waveguide structure. As another characteristic, the optical device, including the doped silica substrate having a doping gradient from the lower surface to the upper surface, is embodied. The doping level at the upper surface has the coefft. of thermal expansion nearly equal to the coefft. of thermal expansion of the doped silica substrate formed thereon.;COPYRIGHT: (C)1996,JPO
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机译：解决的问题：提供一种光学装置，包括具有热匹配边界和波导结构的基板。 ;解决方案：该光学器件被形成为包括具有系数的掺杂二氧化硅衬底20。 8×10 -7 到15×10 -7 °C -1 的热膨胀系数。具有系数的掺杂的二氧化硅波导结构30。在基板上形成8×10 -7 至15×10 -7 °C -1 的热膨胀。在掺杂的二氧化硅波长结构上形成覆盖层40。系数。掺杂的二氧化硅衬底的热膨胀系数的选择为系数的约90-110％。掺杂的二氧化硅波导结构的热膨胀系数。作为另一个特征，体现了光学装置，其包括具有从下表面到上表面的掺杂梯度的掺杂的二氧化硅基板。上表面的掺杂水平具有系数。热膨胀系数几乎等于系数。在其上形成的掺杂二氧化硅衬底的热膨胀特性。;版权所有：（C）1996，日本特许厅
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