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A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER
A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER
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机译:SiC层中硼掺杂区域的制备方法
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摘要
A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer (1) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for making the boron implanted therein electrically active. The method further comprises a step c) of implanting carbon atoms in said layer (1) for forming carbon interstitials in excess with respect to carbon vacancies present in the SiC-layer before carrying out step b).
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