Method of forming silicon nitride thin film and method of manufacturing thin film transistor using silicon nitride thin film

摘要

Method of forming a thin film consisting of a silicon-based material includes a first step of setting a substrate (104) subjected to formation of a thin insulating film consisting of the silicon-based material in a chamber (101) having high-frequency electrodes (106) for receiving a high-frequency power while the substrate is kept heated at a predetermined temperature, a second step of supplying a process gas to the chamber, a third step of applying a high-frequency power to the high-frequency electrodes to generate a plasma, a fourth step of depositing an insulator consisting of the silicon-based material on the substrate to a predetermined thickness while gas supply in the second step and supply of the high-frequency power in the third step are kept maintained, and a fifth step of cooling the substrate on which the insulating film is formed and unloading the substrate from the chamber. In the fourth step, the substrate is kept heated within the temperature range of 230°C to 270°C, and the high-frequency power is controlled to be supplied so that an RF discharge power density falls within the range of 60 to 100 mW/cm².