Apparatus for producing silicon single crystal grown by the Czochralski method

摘要

An apparatus (2) for producing a silicon single crystal (28) grown by the Czochralski method includes a main chamber (6) having a round soulder (6b) interconnecting the upper end of a side wall (6a) and the lower end of a neck (4) of the main chamber (6). The round shoulder (6b) has an inside surface (6c) so profiled as to form a portion of the periphery of an ellipse (E) drawn about two foci (F1, F2) which are composed of the upper end of a heater (16) and a point of the longitudinal axis of a silicon single crystal (28) being grown. The inside surface (6c) has a low emissivity. With the apparatus (2) thus constructed, a silicon single crystal (28) having a high dielectric breakdown strength of oxide film (SiO₂) can be produced in a stable manner with high yield and productivity.