SILICON SINGLE CRYSTAL SUBSTRATE WHICH IS FORMED BY SLICING A SILICON SINGLE CRYSTAL WHICH IS GROWN UP BY A CZOCHRALSKI METHOD AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A silicon single crystal substrate and a manufacturing method thereof are provided to lower an average density of BMD by annealing the silicon single crystal substrate at a temperature more than 1200 °C for 1-8 hours in an argon atmosphere.;CONSTITUTION: A silicon single crystal substrate (10) is equipped with a first main surface (101) and a second main surface (102). The surface layer of the silicon single crystal substrate functions as a device forming area (100). A specific resistance in the center of the first main surface of the silicon single crystal substrate is 50 Ω·cm or greater. The change rate of the specific resistance in the first main surface is 3% or less. An average density of BMD in a central area (200) of thickness direction is 1×10^8 / cm^3 or less.;COPYRIGHT KIPO 2013