SEMICONDUCTOR MEMORY DEVICE HAVING SHIFTING CIRCUIT CONNECTED BETWEEN DATA BUS LINES AND DATA BUFFER CIRCUITS FOR CHANGING CONNECTIONS THEREBETWEEN

摘要

The semiconductor memory device has a plurality of memory cell subarrays 22a-22d, which are selectively used according to the data storage state, and partially available memory cell subarrays to prevent bad memory cell subarrays from accessing data. Memory cell subarrays available for I / O data buffers with higher priority than other I / O data buffer circuits, regardless of the location of bad memory cell subarrays in multiple memory cell subarrays to separate printed circuit boards between semiconductor memory devices. Has a shifting circuit 26 for coupling.