The invention relates to a semiconductor structure constituting a protected rectifier bridge made in an N-type semiconductor substrate (1) divided into three boxes by vertical P-type isolation walls (30, 31), in which the rear face of the substrate is coated with a first metallization (T-) and in which each of the first and second boxes comprises a vertical diode (D2) and a vertical Shockley diode (S2). The third box has an insulation layer P (61) on the side of its rear face in contact with the first metallization and, on the side of its front face, two lateral diodes each of which is formed between a region P (52) and the substrate.
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