Semiconductor structure consists of a protected rectifier bridge in an n-type semiconductor substrate (1) which is divided by vertical p-type isolating walls (30, 31) into three wells, each of the first and second wells including a vertical diode (D2) and a vertical Shockley diode (S2), and which has a back face metallisation (T-) corresponding to the vertical diode anodes and to the Shockley diode cathodes. The novelty is that the third well includes, at the back face side, an isolating p-layer (61) in contact with the metallisation and, at the front face side, two lateral diodes formed between respective p-regions (52) and the substrate.
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