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Integrated circuit contacts having improved electromigration characteristics and fabrication methods therefor
Integrated circuit contacts having improved electromigration characteristics and fabrication methods therefor
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机译:具有改善的电迁移特性的集成电路触点及其制造方法
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摘要
Semiconductor structures and associated methods for limiting electromigration at wiring interfaces. Increased cross-sectional contact sections are employed, with conducting studs in contact therewith. Methods for fabrication and use are disclosed. Contacts for stackable integrated circuit chips and three-dimensional electronic modules particularly are modified with the disclosed structures and methods.
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