Semiconductor device having a Bi-CMOS transistor including an n- channel MOS transistor

摘要

In a semiconductor device and a method of manufacturing the same according to the invention, a p-type diffusion region for electrically connecting a back gate region and an electrode layer together is formed at a source region. Thereby, both of source region and p-type diffusion region are electrically connected to the electrode layer, so that the source region and the back gate region are maintained at the same potential. As a result, it is possible to provide the semiconductor device and the method of manufacturing the same which can suppress operation of a parasitic bipolar transistor formed in the semiconductor device even if a gate electrode has a large width.