ELLIPSOMETRY AND ELLIPSOMETER, SHAPE MEASURING METHOD, AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To approximate a phase slippage and a displacement of principle axis as the function thereof and determine the thickness and refractive index of a thin film from the respective measured values by use of a specified expression (function) by measuring the phase slippage and the displacement of principle axis, and determining the measured values corresponding thereto, respectively. ;SOLUTION: A possible range of values of the phase slippage (Δ) and displacement of principle axis (Ψ) of a thin film to be applied is limited to a certain area, whereby the precision of approximation can be consequently enhanced to enhance the precision of calculation and measurement of refractive index (n) or thickness (d). As an intended variable, either one of the thickness (d) and the refractive index (n) is selected according to the purpose. The selected refractive index (n) or thickness (d) of the thin film is approximately expressed as the function of Δ and Ψ. Thereafter, within the range where a multiple regression expression is determined, the respective measured values δand ϕ are substituted to the multiple regression expression (IV) to calculate the refractive index (n) or thickness (d) of the thin film. Namely, by measuring Δ and Ψ, the refractive index (n) or thickness (d) of the thin film can be determined by one calculation.;COPYRIGHT: (C)1998,JPO