PROBLEM TO BE SOLVED: To improve step coverage in sputtering by shielding the electromagnetic field in the space between a sputtering chamber and an ionizing means and feeding a pure vapor depositing material to the ionizing means. ;SOLUTION: Metalloic ions 38 generated in a sputtering chamber 30 passes through a shield 40 for shielding the electromagnetic field and flows into an electronic collision ionizing device 51. By the operation of the shield 40, impurities such as gaseous Ar or the like are removed, and only the pure neutral metallic atoms 38 are extracted and flow therein. The metallic atoms 38 are ionized by the ionizing device 51 to form into metallic positive ions 39. By the difference in the potential applied to the anode in an ion accelerating device 52, the metallic positive ions 39 are accelerated and are made incident on a wafer 60. Since the metallic positive ions 39 are made incident on the wafer 60 only vertically, an overhand is not formed on the inlet of a contact hall to improve step coverage. The characteristics of a vapor-deposited thin film are made good.;COPYRIGHT: (C)1997,JPO
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