Diamond films suitable for x-ray lithography and their manufacture

摘要

A diamond film is formed on a silicon single crystal substrate by a microwave plasma CVD or hot filament CVD process using a source gas. The source gas consists essentially of 1.0% to 8.0% by volume of CH₄, 87.0% to 99.0% by volume of H₂, and at most 5.0% by volume of O₂. A diamond film having a sufficient crystallinity to serve as a membrane for x-ray lithography and a precisely controlled tensile stress can be formed.