Non-volatile, serial-flash, EPROM, EEPROM and flash-EEPROM type memory in AMG configuration

摘要

The non-volatile memory comprises a MOS selection transistor (40) having an input terminal (41) receiving a first voltage (VIN), an output terminal (42) supplying a second voltage (VOUT), a control terminal (43) receiving a third voltage (VG) and a bulk region (52) housing conductive regions (53, 54) connected to the input and output terminals. The selection transistor (40) is a P-channel transistor and the bulk region (52) is biased at a fourth voltage (VB) not less than the first voltage (VIN).