Method of adjusting polishing pad of chemical mechanical planarization device and chemical mechanical planarization system

摘要

The present invention relates to a chemical mechanical planarization system capable of adjusting a polishing pad during a chemical mechanical polishing process and a method of adjusting the polishing pad, wherein the method provides a chemical mechanical planarization (CMP) device to provide a chemical mechanical planarization on a workpiece received thereon. Performing a polishing process. The chemical mechanical planarization (CMP) device includes a polishing pad disposed horizontally. Conical adjusters are disposed radially across the polishing pad to adjust the polishing pad with the desired adjustment features disposed on the surface of the conical adjuster. The conical regulator is arranged to rotate about its central major axis and to be in rotational contact with the polishing pad.