Method of Manufacturing High Performance Inductor Device by Substrate Conversion Technology

摘要

The present invention is directed to improving the performance of an inductor by reducing the parasitic capacitance between the inductor metal wiring and the substrate using a substrate conversion technique in manufacturing an integrated inductor on a semiconductor substrate.;In order to reduce parasitic capacitance between a substrate and an inductor, a semiconductor substrate is etched in a region where an inductor is formed to form a trench, porous silicon is formed in the trench, a first dielectric layer, A metal wiring, a second dielectric layer, and a secondary metal wiring having a spiral shape are formed to manufacture an inductor element. In addition, a conductive doping layer is formed under the porous silicon in the trench to produce an inductor device having a structure capable of suppressing the loss of the substrate as much as possible when a reverse voltage bias is applied.;INDUSTRIAL APPLICABILITY The present invention can improve the performance of an inductor used in an impedance matching circuit, thereby making RF IC design more stable and easy. Also, it is possible to improve the degree to which the weak signals of high frequency are disturbed by the interference with the substrate.