首页> 外国专利> Method for manufacturing a molybdenum-tip field effect electron emission display device having a triode structure

Method for manufacturing a molybdenum-tip field effect electron emission display device having a triode structure

机译:具有三极管结构的钼尖端场效应电子发射显示装置的制造方法

摘要

The present invention relates to a method for producing a molybdenum tip FED having a triode structure, comprising: depositing and coating a first separation layer (30) and a photoresist layer (32) on a substrate (10) Forming a metal tip (40 ') by depositing a metal layer (40) for a tip on the pattern; etching the photoresist layer (30) and the photoresist layer (32) Depositing a second isolation layer 50 for a second lift-off of the first isolation layer 30 and removing the first isolation layer 30 except for the metal tip 40 ' Etching the metal tip 40 'by dry etching to form the metal tip 40' in a cylindrical shape; depositing a gate insulating layer 60 on the specimen by vacuum deposition; , Wet-etching the second separation layer (50) after the deposition of the insulation layer (60) to remove the insulation layer on the metal tip, A step of sequentially depositing a gate electrode 70 and a third separation layer 80 on the gate insulating layer 60 while rotating the substrate 10 in an oblique direction and depositing molybdenum or other metal layer 40 Etching the third isolation layer 80 on the gate electrode 70 by wet etching to form the microtip 90 by a lift-up process, The height of the tip and the thickness of the gate insulating layer are increased to 1 or more, thereby preventing leakage current and element breakdown, and since the shape of the tip is a pentagonal shape, The structure and the stability against heat are improved.
机译:本发明涉及一种具有三极管结构的钼尖端FED的制造方法,该方法包括:在衬底(10)上沉积并涂覆第一隔离层(30)和光刻胶层(32),从而形成金属尖端(40')。 )通过在图案上沉积用于尖端的金属层(40);蚀刻光致抗蚀剂层(30)和光致抗蚀剂层(32),以沉积第二隔离层50以第二剥离第一隔离层30,并去除第一隔离层30,除了金属尖端40'之外。 40'通过干法蚀刻形成圆柱形的金属尖端40';通过真空沉积在样品上沉积栅绝缘层60; ,在沉积绝缘层(60)之后,湿蚀刻第二隔离层(50)以去除金属尖端上的绝缘层,在栅极绝缘层上顺序沉积栅电极70和第三隔离层80的步骤沿倾斜方向旋转基板10并沉积钼或其他金属层40的同时形成层60,通过提拉工艺通过湿蚀刻在栅电极70上蚀刻第三隔离层80以形成微尖端90,尖端的高度栅极绝缘层的厚度增加到1或更大,从而防止漏电流和元件击穿,并且由于尖端的形状为五边形,因此改善了结构和耐热稳定性。

著录项

  • 公开/公告号KR19990058274A

    专利类型

  • 公开/公告日1999-07-15

    原文格式PDF

  • 申请/专利权人 김덕중;

    申请/专利号KR19970078365

  • 申请日1997-12-30

  • 分类号H01J17/49;

  • 国家 KR

  • 入库时间 2022-08-22 02:16:54

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