Silicon microelectronic field-emissive devices for advanced display technology.

摘要

Field-emission displays (FEDS) offer potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LINL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.