Uniform, stable and high integrated field emitter arrays for high performance displays and vacuum microelectronic switching devices

摘要

Extremely uniform, stable and high integrated field emitter arrays (FEAs) have been developed by the Transfer Mold emitter fabrication method to realize high performance displays and vacuum microelectronic switching devices for the first time. Transfer Mold FEAs having high emitter density of 7,840,000 tips/cm/sup 2/, containing 9,400,000 emitter tips, one of the highest value reported in the world to date, have demonstrated the lowest value of less than 0.7% of emission fluctuation in the world, and highly uniform, no defect, and flickerless fluorescence. The principle of the vacuum microelectronic switching devices also has been proposed and experimentally verified for the first time by applying high anode voltage of /spl plusmn/1 kV, which will be capable of decreasing the size and the electric power loss of the high voltage electric power converters using conventional semiconductor devices such as Light-triggered thyristors (LTT) and Gate Turn Off thyristors (GTO) to less than 1/100 and 1/10 of them, respectively.