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Circuit and control method for signal processing with a switch to reduce insertion loss

机译:用开关来减少插入损耗的信号处理的电路和控制方法

摘要

A high frequency power amplifier is implemented by a GaAs FET and is supplied with a positive and a negative power supply. The amplifier amplifies the power of an input signal and delivers the amplified signal to a high frequency switch (1). The high frequency switch is supplied with switch control voltages in the form of the positive and negative voltages. Since the switch control voltages are implemented as the positive and negative voltages, a great difference in level between the switch control voltages is achievable which improves insertion loss. While the high frequency switch may also be implemented by GaAs FETs, the insertion loss will be further reduced if the negative voltage is applied to the high frequency switch only during transmission. In this case, current consumption will also be reduced if the generation of the negative voltage is controlled at the negative voltage source side. IMAGE
机译:高频功率放大器由GaAs FET实现,并配有正电源和负电源。放大器放大输入信号的功率,并将放大后的信号传送到高频开关(1)。高频开关被提供正电压和负电压形式的开关控制电压。由于将开关控制电压实现为正电压和负电压,因此可以实现开关控制电压之间的电平差很大,从而改善了插入损耗。尽管也可以通过GaAs FET来实现高频开关,但如果仅在传输过程中将负电压施加到高频开关,插入损耗将进一步降低。在这种情况下,如果在负电压源侧控制负电压的产生,则电流消耗也将减少。 <图像>

著录项

  • 公开/公告号DE69416338T2

    专利类型

  • 公开/公告日1999-10-21

    原文格式PDF

  • 申请/专利权人 NEC CORP. TOKIO/TOKYO;

    申请/专利号DE19946016338T

  • 发明设计人 NORIMATSU HIDEHIKO;

    申请日1994-04-26

  • 分类号H03K17/00;H03K17/693;H03K17/06;

  • 国家 DE

  • 入库时间 2022-08-22 02:11:12

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