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Optical semiconductor device provided with strained quantum well layer formed on a ternary compound semiconductor substrate
Optical semiconductor device provided with strained quantum well layer formed on a ternary compound semiconductor substrate
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机译:具有在三元化合物半导体衬底上形成的应变量子阱层的光半导体装置
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摘要
An optical semiconductor device provided with a strained quantum well layer uses a ternary mixed-crystal compound semiconductor substrate on which a strained quantum well layer sandwiched by barrier layers is formed.
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