Method of forming silicide film on silicon with oxygen concentration below 10.sup.18 /cm.sup.3

摘要

A method for fabricating a semiconductor device of the invention, the method includes the steps of: providing an oxygen concentration in a region of a silicon film of 1×10.sup.18 cm.sup.3 or less; depositing a film including a metal on the silicon film; and reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film.