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Low noise amplifier for passive pixel CMOS imager

机译:用于无源像素CMOS成像器的低噪声放大器

摘要

A CMOS imaging system provides low noise read out and amplification for an array of passive pixels, each of which comprises a photodetector, an access MOSFET, and a second MOSFET that functions as a signal overflow shunt and a means for electrically injecting a test signal. The read out circuit for each column of pixels includes a high gain, wide bandwidth, CMOS differential amplifier, a reset switch and selectable feedback capacitors, selectable load capacitors, correlated double sampling and sample-and-hold circuits, an optional pipelining circuit, and an offset cancellation circuit connected to an output bus to suppress the input offset nonuniformity of the amplifier. For full process compatibility with standard silicided submicron CMOS and to maximize yield and minimize die cost, each photodiode may comprise the lightly doped source of its access MOSFET. Circuit complexity is restricted to the column buffers, which exploit signal processing capability inherent in CMOS. Advantages include high fabrication yield, broadband spectral response from near-UV to near-IR, low read noise at HDTV data rates, large charge-handling capacity, variable sensitivity with simple controls, and reduced power consumption.
机译:CMOS成像系统为无源像素阵列提供低噪声读出和放大,每个无源像素包括光电检测器,访问MOSFET和用作信号溢流旁路的第二MOSFET以及用于电注入测试信号的装置。每列像素的读出电路包括高增益,宽带宽,CMOS差分放大器,复位开关和可选的反馈电容器,可选的负载电容器,相关的双采样和采样保持电路,可选的流水线电路以及偏移消除电路,其连接到输出总线以抑制放大器的输入偏移不均匀性。为了与标准的硅化亚微米CMOS全面兼容,并最大程度地提高成品率并降低芯片成本,每个光电二极管都可以包括其访问MOSFET的轻掺杂源。电路的复杂性仅限于利用CMOS固有信号处理能力的列缓冲器。优势包括高制造良率,从近紫外到近红外的宽带光谱响应,在HDTV数据速率下的低读取噪声,大电荷处理能力,具有简单控制的可变灵敏度以及降低的功耗。

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