Semiconductor optical integration component and its production manner

摘要

PROBLEM TO BE SOLVED: To enable the integration of active regions and passive waveguide regions of a small radius of curvature by using an integral forming technique of an active layer by selective MOVPE (org. metal vapor phase growth method) by forming waveguides corresponding to a high mesa structure in the passive waveguides while the selective MOVPE is used. ;SOLUTION: Clad layers are embedded into the semiconductor substrate by dividing these layers to the first clad layer 5 having the refractive index larger than the refractive index of InP and the second clad layer 6 the same as the substrate 1 at the time of growing the InP embedment layers after the simultaneous growth of the lower clad layer 2, active layer 3 and upper clad layer 4 on the semiconductor substrate 1 by selective growth using the MOVPE. Then, the refractive indices of the active layer 3 which is the initially selectively grown optical waveguide layer and the first clad layer 5 grown in the second time may be made nearly the same and the guided light is confined mainly into the first clad layer 5 in the passive waveguide region. Namely, the structure similar to the high mesa structure is obtd. and the radius of curvature may be reduced even in the curvilinear waveguide. The miniaturization of the semiconductor optical element is thus embodied.;COPYRIGHT: (C)1999,JPO