NON-DESTRUCTIVE MEASURING METHOD FOR DOPANT IMPURITY CONCENTRATION IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a dopant impurity concentration of a device, by measuring the dopant impurity concentration along the length wise direction of a semiconductor device using the signal current induced by radiation energy beam. ;SOLUTION: A beam 16 is focused on at a minute point on the surface of a device 12 with a microscope 22 through a polarizing mirror system 20. As a result, an induction current occurs at the device 12 due to the light beam. The beam 16 scans along the length wise direction of the device 12 for each scanning line, and synchronized with a CRT display 30. During scanning with the beam 16, the device 12 is biased in reverse direction with a positive voltage from a power source 24 and a load resistor 46. A photo-responding current is inputted into a signal mixer 28 as a signal ISIGNAL from a sensor resistor 48 through an amplifier 26. Then, two signals R and S from the signal mixer 28 are inputted into a personal computer 34 to provide a dopant impurity concentration along the length wise direction of the device 12.;COPYRIGHT: (C)1999,JPO