CRYSTAL GROWTH METHOD OF COMPOUND SEMICONDUCTOR MIXED CRYSTAL AND COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a compound semiconductor mixed crystal which is enhanced in crystal quality preventing the coaggulation of component elements, fluctuation in composition, and phase separation from occurring owing to nonmiscibility by a method wherein the growth of a compound semiconductor mixed crystal possessed of a nonmiscible region composition in a thermal equilibrium state is interrupted, and a compound semiconductor layer which is of the same component elements and possessed of a miscible region composition is grown. ;SOLUTION: In a process where a compound semiconductor mixed crystal 3a possessed of nonmiscible region composition in a thermal equilibrium state is grown, the growth of the compound semiconductor mixed crystal 3a is interrupted, and a compound semiconductor thin film 3b which is of the same component elements with the compound semiconductor mixed crystal 3a and possessed of a miscible region composition in a thermal equilibrium state is grown. The growth of the compound semiconductor mixed crystal 3a is interrupted, by which coaggulation of component elements, fluctuation in composition, and phase separation are prevented from occurring due to nonmiscibility. The compound semiconductor thin film 3b is inserted, by which the grown compound semiconductor mixed crystal 3a is restrained from affecting the compound semiconductor mixed crystal 3a that is successively grown.;COPYRIGHT: (C)2000,JPO