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p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
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机译:用于这种晶体的p型II-VI族化合物半导体晶体的生长方法以及由该晶体制成的半导体器件
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摘要
A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher.
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