MOSFET WITH RAISED STI ISOLATION SELF-ALIGNED TO THE GATE STACK

摘要

MOSFET WITH RAISED STI ISOLATION SELF-ALIGNED TO THE GATE STACKABSTRACTA semiconductor structure comprising a transistor (39) having a gate conductor(16) that has first and second edges bounded by raised isolation structures (e.g. STI)(30). A source diffusion (38) is self-aligned to the third edge and a drain diffusion (38)is self-aligned to the fourth edge of the gate electrode.Fig. 8