METHOD OF PATTERNING SEMICONDUCTOR MATERIALS AND OTHER BRITTLE MATERIALS

摘要

A method of patterning a brittle material, andparticularly a semiconductor material, is providedcomprising ion implantation induced selective areaexfoliation. The method includes steps of masking thematerial, implanting unmasked regions of the material, withlight ions of Hydrogen or Helium, and rapid thermalannealing at the temperature causing exfoliation of thematerial from the implanted regions. As a result, thematerial is patterned to a depth determined by the depth ofion implantation. The method allows patterning throughcrystalline or non crystalline materials, or several layersof different materials at the same time. When the mask hasstraight sharp edges aligned parallel to natural cleavageplanes of the semiconductor material, the exfoliationresults in formation of high quality sidewall-facets ofexfoliated material and of the remaining patterned materialat the boundaries of exfoliated regions.