Voltage regulator for programming non-volatile and electrically programmable memory cells

摘要

A voltage regulator for programming non-volatile memory cells, which comprises an amplifier stage (4) being powered between a first (VPP) and a second (GND) voltage reference and having a first input terminal connected to a resistive divider (2) of the first reference voltage (VPP) and an output terminal fed back to said input through a current mirror (3), and a source-follower transistor (MOUT) controlled by the output and connected to the cells through a programming line (VP). Also provided is a MOS transistor (MG2) which connects to ground the programming line (VP) and a corresponding resistive path (7) connected between the current mirror (3) and the second voltage reference (GND).