Enhanced quality thin films of Cuw(In,Gay)Sez for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):CuxSe on a substrate to form a large-grain precursor and then converting the excess CuxSe to Cu(In,Ga)Se2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)ySez. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300 DEG -600 DEG C., where the Cu(In,Ga)Se2 remains solid, while the excess CuxSe is in a liquid flux. The characteristic of the resulting Cuw(In,Ga)ySez can be controlled by the temperature. Higher temperatures, such as 500 DEG -600 DEG C., result in a nearly stoichiometric Cu(In,Ga)Se2, whereas lower temperatures, such as 300 DEG -400 DEG C., result in a more Cu-poor compound, such as the Cuz(In,Ga)4Se7 phase.
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机译：通过首先在基板上形成包含Cu（In，Ga）：CuxSe的富Cu相分离化合物混合物以形成大晶粒前体来制造用于半导体器件的Cuw（In，Gay）Sez高质量薄膜。然后将过量的CuxSe暴露于In和/或Ga的活性下，将其以蒸气In和/或Ga的形式或以固体（In，Ga）ySez的形式转化为Cu（In，Ga）Se2。备选地，可以通过将In和/或Ga和Se顺序沉积到相分离的前体上来进行转化。转化过程优选在约300-600℃的温度范围内进行，其中Cu（In，Ga）Se 2保持固态，而过量的Cu x Se处于液态。生成的Cuw（In，Ga）ySez的特性可以通过温度控制。较高的温度（例如500°-600℃）会产生接近化学计量的Cu（In，Ga）Se2，而较低的温度（例如300°-400℃）会导致铜含量更低的化合物，例如作为Cuz（In，Ga）4Se7相。
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