NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE CAPABLE OF SUPPLYING AN ERASABLE VOLTAGE TO A FLASH MEMORY CELL IN SIMPLE STRUCTURE ON ERASING OPERATION

摘要

Non-volatile semiconductor comprising an N-channel transistor 11 and a P-channel transistor 12 and an address driver having a memory cell 15 for erasing the stored contents by supplying a predetermined voltage to the control gate CG. In the memory device, the negative voltage generating circuit 25 supplies the negative voltage to the control gate CG of the memory cell 15 through the N-channel transistor 11 to erase the memory content. By supplying a negative voltage to one of the source and the drain of 11), the stored contents of the memory cell 15 are erased. When writing data in the memory cell 15, the constant voltage generation circuit 30 is provided to the control gate CG of the memory cell 15 rather than the output voltage of the address driver 10, 11, 12 instead of the output voltage of the address driver. Supply high voltage.