Nonlinear circuit element or interconnection structure, e.g. a copper oxide rectifier, is formed on an integrated circuit by successive formation of a diffusion barrier layer, a copper layer and a copper oxide layer

摘要

Formation of a nonlinear circuit element on an integrated circuit (IC), by successive formation of a diffusion barrier layer, a copper layer and a copper oxide layer. An Independent claim is also included for an electrical interconnection structure comprising the layers described above on a substrate. Preferred Features: The copper oxide layer is a deposited layer or an oxidized copper layer formed by applying and patterning a dielectric layer, depositing and selectively etching a diffusion barrier layer on the copper layer and applying a copper oxide layer on the exposed copper.