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ii-vi laser diodes by atomlagen and migrationsverstaerkte epitaxie brought up in quantum wells
ii-vi laser diodes by atomlagen and migrationsverstaerkte epitaxie brought up in quantum wells
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机译:原子阱和迁移引起的ii-vi激光二极管与量子阱中生长的外延外延
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摘要
A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200 DEG C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe)m(ZnSe)n]p where m, n and p are integers.
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