首页> 外国专利> high frequency plasmaverfahren and the plasma by inductive structure is suggested in which the phase and antiphasekomponenten of capacitive flows between the inductive structure and the plasma are balanced

high frequency plasmaverfahren and the plasma by inductive structure is suggested in which the phase and antiphasekomponenten of capacitive flows between the inductive structure and the plasma are balanced

机译:建议高频等离子体和感应结构的等离子体,其中感应结构和等离子体之间的电容流动的相和反相平衡。

摘要

A process for fabricating a product including the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a plasma excited by a high frequency field provided by an inductive coupling structure in which the phase and anti-phase capacitive currents into the plasma are substantially balanced.
机译:一种制造产品的方法,该方法包括以下步骤:使基板经受实体的组成,其中至少一个实体源自由感应耦合结构所提供的高频场所激发的等离子体所产生的物质,其中,相和进入等离子体的反相电容性电流基本平衡。

著录项

  • 公开/公告号DE69607200D1

    专利类型

  • 公开/公告日2000-04-20

    原文格式PDF

  • 申请/专利权人 MC ELECTRONICS CO. LTD.;

    申请/专利号DE19966007200T

  • 发明设计人 VINOGRADOV GEORGY;YONEYAMA SHIMAO;

    申请日1996-10-29

  • 分类号H05H1/46;H01J37/32;

  • 国家 DE

  • 入库时间 2022-08-22 01:40:13

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号