首页> 外国专利> A HIGH-FREQUENCY PLASMA PROCESS WHEREIN THE PLASMA IS EXCITED BY AN INDUCTIVE STRUCTURE IN WHICH THE PHASE AND ANTI-PHASE PORTIONS OF THE CAPACITIVE CURRENTS BETWEEN THE INDUCTIVE STRUCTURE AND THE PLASMA ARE BALANCED

A HIGH-FREQUENCY PLASMA PROCESS WHEREIN THE PLASMA IS EXCITED BY AN INDUCTIVE STRUCTURE IN WHICH THE PHASE AND ANTI-PHASE PORTIONS OF THE CAPACITIVE CURRENTS BETWEEN THE INDUCTIVE STRUCTURE AND THE PLASMA ARE BALANCED

机译:感应结构激发等离子体的高频过程,其中感应结构和等离子体之间的电容电流的相和反相部分是平衡的

摘要

A process for fabricating a product (28, 119). The process comprises the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a gaseous discharge excited by a high frequency field in which the vector sum of phase and anti-phase capacitive coupled voltages from the inductive coupling structure substantially balances.
机译:制造产品的过程(28、119)。所述方法包括以下步骤:使衬底经受实体的组成,所述实体中的至少一个源自由高频场激发的气体放电产生的物质,在所述高频场中,相电容和相电容耦合电压的矢量和来自电感耦合结构的电流基本上平衡。

著录项

  • 公开/公告号EP0865716B1

    专利类型

  • 公开/公告日2000-03-15

    原文格式PDF

  • 申请/专利权人 MC ELECTRONICS CO LTD;

    申请/专利号EP19960937442

  • 发明设计人 YONEYAMA SHIMAO;VINOGRADOV GEORGY;

    申请日1996-10-29

  • 分类号H05H1/46;H01J37/32;

  • 国家 EP

  • 入库时间 2022-08-22 01:48:30

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