首页> 外国专利> A HIGH-FREQUENCY PLASMA PROCESS WHEREIN THE PLASMA IS EXCITED BY AN INDUCTIVE STRUCTURE IN WHICH THE PHASE AND ANTI-PHASE PORTIONS OF THE CAPACITIVE CURRENTS BETWEEN THE INDUCTIVE STRUCTURE AND THE PLASMA ARE BALANCED

A HIGH-FREQUENCY PLASMA PROCESS WHEREIN THE PLASMA IS EXCITED BY AN INDUCTIVE STRUCTURE IN WHICH THE PHASE AND ANTI-PHASE PORTIONS OF THE CAPACITIVE CURRENTS BETWEEN THE INDUCTIVE STRUCTURE AND THE PLASMA ARE BALANCED

机译:感应结构激发等离子体的高频过程,其中感应结构和等离子体之间的电容电流的相和反相部分是平衡的

摘要

A process for fabricating a product including the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a plasma excited by a high frequency field provided by an inductive coupling structure in which the phase and anti-phase capacitive currents into the plasma are substantially balanced.
机译:一种制造产品的方法,包括以下步骤:使衬底经受实体的组成,所述实体中的至少一个源自由感应耦合结构所提供的高频场所激发的等离子体所产生的物质,其中所述相和进入等离子体的反相电容性电流基本平衡。

著录项

  • 公开/公告号KR100663874B1

    专利类型

  • 公开/公告日2007-06-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR19980704184

  • 申请日1998-06-03

  • 分类号H05H1/46;

  • 国家 KR

  • 入库时间 2022-08-21 20:33:18

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