Bipolar power transistor with buried base and interdigitated geometry

摘要

A bipolar power transistor of interdigitated geometry having a buried P type base region, a buried N type emitter region, a P type base- contact region, an N type emitter-contact region, connected to an emitter electrode and an N type connection region disposed around the emitter- contact region. The emitter region is buried within the base region in such a way that the buried emitter region and the connection region delimit a P type screen region. The transistor further includes a biasing P type region in contact with the emitter electrode, which extends up to the screen region.