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Methodology for improved semiconductor process monitoring using optical emission spectroscopy

机译:使用光发射光谱法改进半导体工艺监控的方法

摘要

In a semiconductor process which utilizes a plasma within a process tool chamber, a method of using optical emission spectroscopy (OES) to monitor a particular parameter of the process is disclosed. A first wavelength present in the plasma is determined which varies highly in intensity depending on the particular parameter by observing a statistically significant sample representing variations of the particular parameter. A second wavelength of chemical significance to the process is also determined which is relatively stable in intensity over time irrespective of variations of the particular parameter, also by observing a statistically significant sample representing variations of the particular parameter. These two wavelengths may be determined from test wafers and off-line physical measurements. Then, the intensity of the first and second wavelengths present in the plasma is measured on- line during normal processing within the process tool chamber, and the ratio between the first and second wavelength's respective intensities generates a numeric value which is correlated to the particular parameter. As an example, such a method may be used to generate a reliable alarm signal indicating the presence of etch stop conditions within a plasma oxide etcher, as well as to indicate the oxide etch rate.
机译:在利用工艺工具腔室内的等离子体的半导体工艺中,公开了一种使用光发射光谱法(OES)来监控工艺的特定参数的方法。通过观察代表特定参数变化的统计学显着样本,确定存在于等离子体中的第一波长,该第一波长的强度根据特定参数而变化很大。还通过观察代表特定参数变化的统计学显着的样品,确定对过程具有化学意义的第二波长,该第二波长在时间上强度相对稳定,而与特定参数的变化无关。这两个波长可以从测试晶片和离线物理测量中确定。然后,在处理工具腔室内的正常处理期间,在线测量等离子体中存在的第一和第二波长的强度,并且第一和第二波长的各自强度之间的比值生成一个与特定参数相关的数值。作为示例,这样的方法可以用于生成可靠的警报信号,该警报信号指示在等离子体氧化物刻蚀机内的刻蚀停止条件的存在,以及指示氧化物刻蚀速率。

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